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july 2011 doc id 019060 rev 1 1/15 15 STH180N10F3-2 n-channel 100 v, 3.9 m ? , 180 a, h2pak-2 stripfet?iii power mosfet features ultra low on-resistance 100% avalanche tested applications high current switching applications description this device is an n-channel enhancement mode power mosfets produced using stmicroelectronics? stripfet? iii technology, which is specifically designed to minimize on- resistance and gate charge to provide superior switching performance. figure 1. internal schematic diagram order codes v dss r ds(on) max. i d STH180N10F3-2 100 v 4.5 m ? 180 a h 2 pak-2 1 2 tab 3 d(tab) g(1) s (2, 3 ) s c06140_h2pak-2 table 1. device summary order codes marking package packaging STH180N10F3-2 180n10f3 h 2 pak-2 tape and reel www.st.com
contents STH180N10F3-2 2/15 doc id 019060 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STH180N10F3-2 electrical ratings doc id 019060 rev 1 3/15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs =0) 100 v v gs gate-source voltage 20 v i d (1) 1. current limited by package. drain current (continuous) at t c = 25c 180 a i d (1) drain current (continuous) at t c =100c 120 a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 720 a p tot total dissipation at t c = 25c 315 w derating factor 2.1 w/c dv/dt peak diode recovery voltage slope 20 v/ns e as (3) 3. starting tj = 25 c, i d = 80 a, v dd = 50 v. single pulse avalanche energy 350 mj t j t stg operating junction temperature storage temperature - 55 to 175 c table 3. thermal data symbol parameter value unit rthj-case thermal resistance junction-case 0.48 c/w rthj-pcb (1) 1. when mounted on fr-4 board, on 1inch2, 2oz cu. thermal resistance j unction-pcb max 35 c/w
electrical characteristics STH180N10F3-2 4/15 doc id 019060 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 250 a 100 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating,@125c 10 100 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 200 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 60 a 3.9 4.5 m ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 6665 786 49 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 50 v, i d = 120 a, v gs = 10 v (see figure 14 ) - 114.6 38.8 31.9 - nc nc nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 50 v, i d = 60 a r g =4.7 ? v gs = 10 v (see figure 13 , figure 18 ) - 25.6 97.1 99.9 6.9 - ns ns ns ns
STH180N10F3-2 electrical characteristics doc id 019060 rev 1 5/15 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 180 720 a a v sd (2) 2. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd =120 a, v gs =0 -1.5v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =120 a, di/dt = 100 a/s, v dd =80 v, tj=150c (see figure 15 ) - 83.4 295.7 7.1 ns nc a
electrical characteristics STH180N10F3-2 6/15 doc id 019060 rev 1 2.1 electrical characteri stics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on resistance for h2pak i d 100 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 100 s 1m s 10m s tj=175c tc=25c s ingle p u l s e am0 8 625v1 10 -5 10 -4 10 - 3 10 -2 10 -1 t p ( s ) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/ tp s ingle p u l s e =0.5 2 8 0tok i d 200 150 50 0 0 2 v d s (v) 4 (a) 1 3 5 250 3 00 5v 6v 7v v g s =10v 67 8 100 3 50 am0 8 616v1 i d 200 150 50 0 0 4 v g s (v) 8 (a) 2 6 9 250 3 00 1 3 5 7 v d s =2v 100 3 50 am0 8 617v1 bv d ss -75 t j (c) (norm) -25 75 25 125 0.90 0.95 1.00 1.05 1.10 175 i d =1ma am0 8 61 8 v1 r d s (on) 3 . 8 3 .7 3 .6 0 40 i d (a) ( ? ) 20 60 3 .9 4.0 v g s =10v 100 8 0 120 4.1 4.2 140 160 1 8 0 am0 8 626v1
STH180N10F3-2 electrical characteristics doc id 019060 rev 1 7/15 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics v g s 6 4 2 0 0 20 q g (nc) (v) 8 0 8 40 60 10 v dd =50v i d =120a 100 12 120 140 am0 8 620v1 c 15000 10000 5000 0 0 40 v d s (v) (pf) 20 20000 60 ci ss co ss cr ss 8 0 100 am0 8 621v1 v g s (th) 0.9 0.7 0.5 0. 3 -75 t j (c) (norm) -25 1.1 75 25 125 175 1. 3 i d =250 a am0 8 622v1 r d s (on) 1.1 0.9 0.7 0.5 -75 t j (c) (norm) -25 75 25 125 175 1. 3 1.5 1.7 1.9 2.1 i d =60a v g s =10v am0 8 62 3 v1 v s d 0 40 i s d (a) (v) 20 100 60 8 0 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 t j =-55c t j =175c t j =25c 120 am0 8 624v1
test circuits STH180N10F3-2 8/15 doc id 019060 rev 1 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive wavefo rm figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STH180N10F3-2 package mechanical data doc id 019060 rev 1 9/15 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 8. h2pak-2 mechanical data dim. mm min. typ. max. a4.30 - 4.80 a1 0.03 0.20 c 1.17 1.37 e 4.98 5.18 e 0.50 0.90 f 0.78 0.85 h 10.00 10.40 h1 7.40 7.80 l 15.30 15.80 l1 1.27 1.40 l2 4.93 5.23 l3 6.85 7.25 l4 1.5 1.7 m2.6 2.9 r 0.20 0.60 v0 8
package mechanical data STH180N10F3-2 10/15 doc id 019060 rev 1 figure 19. h2pak-2 drawing 8159712_c
STH180N10F3-2 package mechanical data doc id 019060 rev 1 11/15 figure 20. h2pak-2 recommended footprint 8159712_c
packaging mechanical data STH180N10F3-2 12/15 doc id 019060 rev 1 5 packaging mechanical data table 9. h2pak-2 tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
STH180N10F3-2 packaging mechanical data doc id 019060 rev 1 13/15 figure 21. tape reel p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2 a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
revision history STH180N10F3-2 14/15 doc id 019060 rev 1 6 revision history table 10. document revision history date revision changes 18-jul-2011 1 first version.
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